Published: 20 July 1998 06:28 GMT
The days of silicon could be numbered according to engineers at the University of Delaware. A report in Wired Online claims they are currently developing a technique that produces ultra-thin alumina film.
Alumina, found in rubies and sapphires, can be used within transistors to offer electrical storage capacity three times greater than existing technology.
By combining aluminum with positively charged silicon substrate in the presence of nitrogen and argon gases, aluminum nitrade is created. Once this is oxidised, the nitrogen is replaced with oxygen to form an aluminum oxide.
The aluminum is placed into a cylindrical furnace and heated so it will thicken. The alumina has a capacity three times that of silicon dioxide.
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